IRGP20B120U-E |
RFQ for IRGP20B120U-E Required Field |
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| Technical/Catalog Information | IRGP20B120U-EP |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 40A |
| Vce(on) (Max) @ Vge, Ic | 4.85V @ 15V, 40A |
| Power - Max | 300W |
| Mounting Type | Through Hole |
| Package / Case | TO-247AD |
| Packaging | Bag |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGP20B120U EP IRGP20B120UEP |
| Product | Manufacturers | Pack | D/C |
| IRGP20B120U-E | - | TO-247 | 05+ |
Features |
| • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit capability• Square RBSOA• Positive VCE(on) Temperature Coefficient• Extended lead TO-247 package |
| Parameter |
Max. | Units | |
| VCES | Collector-to-Emitter Breakdown Voltage | 1200 | V |
| I @ T= 25°C | Continuous Collector Current (Fig.1) | 40 | |
| I @ T= 100°C | Continuous Collector Current (Fig.1) | 20 | |
| ICM | Pulsed Collector Current (Fig.3, Fig. CT.5) | 120 | |
| ILM | Clamped Inductive Load Current(Fig.4, Fig. CT.2) | 120 | |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| EAS@ TC=25°C |
CAvalanche Energy, single pulse IC= 25A, VCC= 50V, RGE= 25ohm |
65 | mJ |
| DC @ T= 25°C | CMaximum Power Dissipation (Fig.2) | 300 | W |
| PD @ TC= 100°C | CMaximum Power Dissipation (Fig.2) | 120 | |
| TJT STG |
Operating Junction and Storage Temperature Range | -55 to + 150 | °C |
| Soldering Temperature, for 10 seconds | 300, (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
